High Temperature (250c) SiC Junction Transistors Offered In Hermetic Packages

Top Quote The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies. End Quote
  • (1888PressRelease) December 11, 2013 - Dulles, Virginia. - GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability through its distributors and directly a family high temperature packaged 600 V SiC Junction Transistors (SJT) in the 3-50 Amperes current ratings in JEDEC industry-standard through hole and surface mount packages.

    Incorporating these high temperature, low on-resistance, high frequency SiC Transistors in hermetic packages, high temperature solders and encapsulation will increase conversion efficiency and reduce the size/weight/volume of high temperature power conversion applications.

    "As downhole and aerospace application designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, they need SiC switches which can offer a standard of performance, reliability and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC's SJT products help designers achieve all that in a more robust solution.

    These products complement the hermetic packaged SiC rectifier released last year by GeneSiC, and the bare die products released earlier this year, while paving the way for us to offer high temperature, low-inductance, power modules in the near future " said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

    Isolated TO-257 with 600 V SJTs:

    65 mOhms/20 Amp (2N7639-GA); 170 mOhms/8 Amp (2N7637-GA); and 425 mOhms/4 Amp (2N7635-GA)
    Tjmax = 250oC
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