Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation.
The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies.
High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities.
R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2011 R&D 100 Award for the commercialization of Silicon Carbide devices with high voltage ratings.
GeneSiC announces its selection towards development of high temperature power devices for NASA applications. These devices will be optimized for operation under Venus-like ambients (500 °C surface temperatures) for use in motor control power modules.
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